tpcp8902 TOSHIBA Semiconductor CORPORATION, tpcp8902 Datasheet - Page 6

• Manufacturer Part Number: tpcp8902
• Description: Toshiba Transistor Silicon Npn / Pnp Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
10
1
0.001
0.8
0.6
0.4
0.2
0
1
0
DC operation
Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
0.01
Collector power dissipation at the single-device operation is 0.89W.
Collector power dissipation at the single-device value at dual
operation is 0.52W.
Collector power dissipation at the dual operation is set to 1.04W.
Permissible Power Dissipation for Simultaneous
Permissible power dissipation for Q1
0.2
0.1
Pulse width t
Curves apply only to limited areas of thermal resistance.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm
0.4
Operation
P
2
)
C
(W)
r
th
0.6
– t
w
1
6
w
(s)
0.8
10
1
100
2
1000
)
TPCP8902
2009-06-11