tpcp8h02 TOSHIBA Semiconductor CORPORATION, tpcp8h02 Datasheet - Page 2

• Manufacturer Part Number: tpcp8h02
• Description: Silicon Npn Epitaxial Type, Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Common Absolute Maximum Rating (Ta = 25°C)
Electrical Characteristics
Figure 1 Switching Time Test Circuit & Timing Chart
Storage temperature range
Marking
Note 4: The mark ” ” on the lower left of the marking indicates Pin 1.
Transistor
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Switching time
Duty cycle < 1%
I
B1
Characteristics
* Weekly code (three digits)
8H02
Characteristics
20 μs
(Note 4)
I
B2
*
Storage time
Rise time
Fall time
Input
I
I
B1
B2
Year of manufacture
(Last digit of the calendar year)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
(Ta = 25°C)
Type
(Weekly code)
Lot No.
V
Symbol
CC
T
V
stg
V
V
Symbol
h
h
(BR) CEO
Output
CE (sat)
BE (sat)
I
I
FE
FE
CBO
C
EBO
t
stg
t
t
ob
r
f
(1)
(2)
−55 to 150
V
V
I
V
V
I
I
V
See Figure 1 circuit diagram.
V
I
C
C
C
B1
Rating
CB
EB
CE
CE
CB
CC
= 10 mA, I
= 1.0 A, I
= 1.0 A, I
2
= -I
= 6 V, I
= 50 V, I
= 2 V, I
= 2 V, I
= 10V, I
≒ 12 V, R
B2
= 33 mA
Test Condition
B
B
C
C
C
E
B
E
= 33 mA
= 33 mA
= 0
= 0.3 A
= 1.0 A
= 0, f=1MHz
= 0
= 0
Unit
L
°C
= 12 Ω
Min
250
120
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
320
18
40
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCP8H02
2006-11-13
Max
100
100
400
140
1.1
⎯
⎯
⎯
⎯
⎯
⎯
Unit
mV
nA
nA
pF
ns
V
V