tpcp8102 TOSHIBA Semiconductor CORPORATION, tpcp8102 Datasheet - Page 5

• Manufacturer Part Number: tpcp8102
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos ??
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
2.0
1.6
1.2
0.8
0.4
60
50
40
30
20
10
0
−80
0
0.1
0
V GS = −2.5 V
V GS = −4.5 V
(1)
(2)
Common source
Pulse test
Common source
Ta = 25°C
V GS = 0 V
f = 1 MHz
V GS = −2 V
−40
Drain−source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (
40
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
0
R
80
board (a) (Note 2a)
board (b) (Note 2b)
DS (ON)
t = 5 s
C – V
P
D
40
– Ta
−3.6 A
I D = −7.2 A, −3.6 A, −1.8 A
DS
– Ta
80
10
DS
160
°
C iss
C oss
I D = −7.2 A
C rss
C)
(V)
120
−1.8 A
200
160
100
5
−100
−0.1
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
−10
−20
−15
−10
−1
−5
−80
0
0
0
0
V DD = −16 V
−4
−8
−10
−0.2
Drain−source voltage V
−40
Ambient temperature Ta (
V DS
−3 V
Total gate charge Q
−5
10
Dynamic input/output
−3
−0.4
0
characteristics
I
DR
V
th
V GS
−0.6
– V
40
−4
20
−1
– Ta
−8
DS
−0.8
80
g
V GS = 0 V
Common source
I D = 7.2 A
Ta = 25°C
Pulse test
DS
Common source
V DS = −10 V
I D = −200 μA
Pulse test
Common source
Ta = 25°C
Pulse test
(nC)
30
V DD = −16 V
°
−1.0
(V)
120
C)
TPCP8102
2006-11-17
−1.2
160
40
−8
−6
−4
−2
0