tpcp8403 TOSHIBA Semiconductor CORPORATION, tpcp8403 Datasheet - Page 8

• Manufacturer Part Number: tpcp8403
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
100
0.1
16
20
12
10
4
10
8
0
1
8
6
4
2
0
0.1
0
0
Common source
V DS =10 V
Pulse test
Common source
V DS = 10 V
Pulse test
Ta = −55°C
Drain−source voltage V
Gate−source voltage V
8
10
0.2
6
2
Drain current I
100
1
0.4
⎪Y
I
I
D
D
5
fs
Ta = −55°C
– V
– V
⎪ – I
4.5
25
4
25
DS
4
GS
0.6
D
D
3.8
100
10
3.6
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
V GS = 2.8 V
3.4
6
0.8
3.2
(V)
(V)
3
1.0
100
8
8
0.8
100
1.0
20
16
12
0.6
0.4
0.2
10
8
4
0
0
0.1
0
0
Common source
Tc = 25°C
Pulse test
6
8
10
Drain−source voltage V
Gate−source voltage V
1.2
2
1
Drain current I
4.5
5
4
I D = 4.7A
1
R
V
DS (ON)
2
I
DS
V GS = 10 V
D
6
– V
2.4
4.5
– V
DS
GS
8
– I
3
D
D
10
GS
DS
(A)
Common source
Ta= 25℃
Pulse test
V GS = 3 V
10
Common source
Tc = 25°C
Pulse test
4
3.8
3.6
3.4
3.2
4
(V)
(V)
TPCP8403
12
2006-11-13
100
5
14