tpcp8205-h TOSHIBA Semiconductor CORPORATION, tpcp8205-h Datasheet - Page 2

• Manufacturer Part Number: tpcp8205-h
• Description: Mosfets Silicon N-channel Mos U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

4. 4. 4. 4. Absolute Maximum Ratings (Note) (T
5. 5. 5. 5. Thermal Characteristics
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Thermal Characteristics
Thermal Characteristics
Absolute Maximum Ratings (Note) (T
Thermal Characteristics
Note:
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single
Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power
Note 6: V
Note 7: Repetitive rating; pulse width limited by maximum channel temperature
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature
Channel-to-ambient thermal resistance (single
operation)
Channel-to-ambient thermal resistance (per device for
dual operation)
Channel-to-ambient thermal resistance (single
operation)
Channel-to-ambient thermal resistance (per device for
dual operation)
Fig.
Fig.
Fig.
Fig. 5.1
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
operation, power is supplied to only one of the two devices.)
is evenly supplied to both devices.)
5.1
5.1
5.1 Device Mounted on a Glass-Epoxy
DD
= 24 V, T
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
ch
Board (a)
Board (a)
Board (a)
Board (a)
= 25 (initial), L = 0.2 mH, R
Characteristics
Characteristics
(t = 5 s)
(t = 5 s)
(t = 5 s)
(t = 5 s)
a a a a
= 25
= 25
= 25
= 25    unless otherwise specified)
G
2
(t = 5 s)
(t = 5 s)
(t = 5 s)
(t = 5 s)
= 25 Ω, I
(Note 2),(Note 4)
(Note 2),(Note 5)
(Note 3),(Note 4)
(Note 3),(Note 5)
(Note 2),(Note 7)
(Note 1)
(Note 1)
(Note 6)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Fig.
Fig.
Fig.
Fig. 5.2
AR
5.2
5.2
5.2 Device Mounted on a Glass-Epoxy
= 6.5 A
(Note 2),(Note 4)
(Note 2),(Note 5)
(Note 3),(Note 4)
(Note 3),(Note 5)
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Symbol
V
V
P
P
P
P
E
E
T
T
I
I
DSS
GSS
I
DP
D(1)
D(2)
D(1)
D(2)
AR
D
AS
AR
stg
ch
Board (b)
Board (b)
Board (b)
Board (b)
R
R
R
R
Symbol
th(ch-a)(1)
th(ch-a)(2)
th(ch-a)(1)
th(ch-a)(2)
-55 to 150
Rating
0.032
1.48
1.23
0.58
0.36
10.9
±20
150
6.5
6.5
TPCP8205-H
30
26
101.6
215.5
347.2
84.5
Max
2011-03-14
Rev.3.0
/W
Unit
Unit
mJ
mJ
W

V
A
A