tpcp8204 TOSHIBA Semiconductor CORPORATION, tpcp8204 Datasheet - Page 4

no-image

tpcp8204

Manufacturer Part Number
tpcp8204
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos ?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1000
100
0.1
10
10
4
2
5
4
3
2
1
0
8
6
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
Drain−source voltage V
Gate−source voltage V
8
0.2
1
6
Drain current I
5
4.5
1
0.4
Ta = −55°C
2
⎪Y
I
I
D
D
100
4
fs
– V
– V
100
⎪ – I
GS
DS
0.6
D
25
3
D
3.8
Ta = −55°C
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
25
V GS = 2.8 V
0.8
4
(V)
(V)
3.6
3.4
3.2
3
100
1.0
5
4
1000
100
2.0
0.5
1.5
10
10
1
0
8
6
4
2
0
1
0.1
0
0
10
Drain−source voltage V
8
Gate-source voltage V
5
6
1
2
V GS = 4.5 V
Drain current I
1
1
10
R
V
DS (ON)
2
4
I
DS
D
– V
– V
DS
GS
– I
6
3
2.1
D
D
4
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta= 25℃
Pulse test
Common source
Ta = 25°C
Pulse test
I D = 4.2 A
4
8
(V)
V GS = 3 V
(V)
TPCP8204
2010-09-08
3.8
3.4
3.2
3.6
100
10
5

Related parts for tpcp8204