tpcp8503 TOSHIBA Semiconductor CORPORATION, tpcp8503 Datasheet - Page 2

• Manufacturer Part Number: tpcp8503
• Description: Toshiba Transistor Silicon Npn Triple Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Figure1. Circuit Configuration
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Note 1 : Please use devices on condition that the junction temperature is below 150℃.
Note 2 : Mounted on FR4 board( glass epoxy, 1.6mm thick, Cu area: 645mm
Note 3 :● on lower left of the marking indicates Pin 1.
※ Weekly code: (three digits)
Characteristics
8
1
7
2
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
(One low-order digits of calendar year)
Year of manufacture
6
3
5
4
(Ta = 25°C)
V
Symbol
h
h
V
CE (sat)
I
I
FE (1)
FE (2)
V
CBO
EBO
C
CEO
BE
ob
V
V
I
V
V
I
V
V
C
C
CB
EB
CE
CE
CE
CB
= 1 mA, I
= 20 mA, I
Figure2. Marking(Note 3)
= 600 V, I
= 7 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
2
B
C
C
C
C
Test Condition
8503
B
E
= 0
= 0
= 1 mA
= 20 mA
= 20 mA
E
= 0.5 mA
= 0, f = 1 MHz
= 0
※
2
)
Type
Lot No.
600
100
Min
80
―
―
―
―
―
Typ.
5.5
―
―
―
―
―
―
―
TPCP8503
2006-11-16
Max
100
100
300
1.0
1.1
―
―
―
Unit
μA
μA
pF
V
V
V