ne8500100 California Eastern Laboratories, ne8500100 Datasheet
ne8500100
Related parts for ne8500100
ne8500100 Summary of contents
Page 1
... HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUSTRY STANDARD PACKAGING • THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 DESCRIPTION The NE8500199 is a medium power GaAs MESFET designed for output stage driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GH available in the “ ...
Page 2
TYPICAL SCATTERING PARAMETERS 10.1 GHz 10.1 GHz 0.1 GHz - 8500100 (2 Cells 200 mA ...
Page 3
TYPICAL SCATTERING PARAMETERS 10.1 GHz 10.1 GHz S 0.1 GHz 8500100 (1 Cell 100 mA DS ...
Page 4
... MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM ...