ne851m33-t3 Renesas Electronics Corporation., ne851m33-t3 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
ne851m33-t3
Manufacturer Part Number
ne851m33-t3
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.NE851M33-T3.pdf
(9 pages)
6
Remark The graphs indicate nominal characteristics.
−10
25
20
15
10
15
10
−5
10
−5
5
0
5
0
5
0
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
1
1
1
MSG
V
f = 4 GHz
V
f = 1 GHz
CE
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
CE
MAG
= 1 V
= 1 V
Collector Current I
Collector Current I
Collector Current I
MSG
10
10
10
MSG
|S
|S
|S
21e
21e
21e
MAG
|
C
C
|
C
2
|
2
2
(mA)
(mA)
(mA)
V
f = 2 GHz
CE
Data Sheet PU10343EJ03V0DS
= 1 V
100
100
100
−10
25
20
15
10
−5
15
10
−5
10
−5
5
0
5
0
5
0
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
1
1
1
V
f = 1 GHz
V
f = 4 GHz
MSG
CE
CE
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
= 2 V
= 2 V
MAG
Collector Current I
Collector Current I
Collector Current I
MSG
10
10
10
MSG
|S
|S
|S
21e
21e
21e
C
C
MAG
C
|
|
2
2
|
(mA)
(mA)
(mA)
2
NE851M33
V
f = 2 GHz
CE
= 2 V
100
100
100