mgw12n120 Freescale Semiconductor, Inc, mgw12n120 Datasheet - Page 6

• Manufacturer Part Number: mgw12n120
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: Freescale Semiconductor, Inc

MGW12N120
6
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0.25 (0.010)
0.25 (0.010)
M
M
T B
K
Y Q
A
–Q–
R
P
M
F
S
D
◊
1
–B–
2
G
3
V
U
PACKAGE DIMENSIONS
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CASE 340F–03
TO–247AE
ISSUE E
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JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
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J
E
Motorola TMOS Power MOSFET Transistor Device Data
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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H
*MGW12N120/D*
4
NOTES:
1.
2.
Y14.5M, 1982.
STYLE 4:
DIM
G
Q
A
B
C
D
E
F
H
J
K
L
P
R
U
V
DIMENSIONING AND TOLERANCING PER ANSI
CONTROLLING DIMENSION: MILLIMETER.
PIN 1. GATE
20.40
15.44
15.57
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MILLIMETERS
MIN
4.70
1.09
1.50
1.80
2.56
0.48
7.26
3.10
3.50
3.30
3.05
5.45 BSC
5.30 BSC
20.90
15.95
16.08
MAX
5.21
1.30
1.63
2.18
2.87
0.68
7.50
3.38
3.70
3.80
3.40
0.803
0.608
0.185
0.043
0.059
0.071
0.101
0.019
0.613
0.286
0.122
0.138
0.130
0.120
MIN
0.215 BSC
0.209 BSC
INCHES
MGW12N120/D
MAX
0.823
0.628
0.205
0.051
0.064
0.086
0.113
0.027
0.633
0.295
0.133
0.145
0.150
0.134