hcts75ms Intersil Corporation, hcts75ms Datasheet

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hcts75ms

Manufacturer Part Number
hcts75ms
Description
Radiation Hardened Dual 2-bit Bistable Transparent Latch
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS75MS is a Radiation Hardened dual 2-bit
bistable transparent latch. Each of the two latches are controlled
by a separate enable input (E) which are active low. E low latches
the output state.
The HCTS75MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCTS75MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS75DMSR
HCTS75KMSR
HCTS75D/
Sample
HCTS75K/
Sample
HCTS75HMSR
(Typ)
- VIL = 0.8V Max
- VIH = VCC/2 Min
NUMBER
PART
TEMPERATURE
-55
-55
o
o
C to +125
C to +125
RANGE
+25
+25
+25
10
o
o
o
C
C
C
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
|
o
o
Copyright
C
C
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
Sample
Die
SCREENING
12
o
C to +125
LEVEL
©
RAD (Si)/s
Intersil Corporation 1999
o
-9
C
2
16 Lead SBDIP
16 Lead Ceramic
Flatpack
16 Lead SBDIP
16 Lead Ceramic
Flatpack
Die
/mg
Errors/Bit-Day
PACKAGE
470
Dual 2-Bit Bistable Transparent Latch
Pinouts
Functional Diagram
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
D0
D1
HCTS75MS
Q0
D0
D1
D0
D1
Q1
12
VCC
13(4)
E
E
5
2(6)
3(7)
1
1
1
2
2
2
2
D
H
X
L
VCC
GND
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
INPUTS
VCC
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
Q0
D0
D1
D0
D1
Q1
E
1
1
1
2
2
2
2
E
H
H
L
1
2
3
4
5
6
7
8
TRUTH TABLE
D
LE
LE
D
1
2
3
4
5
6
7
8
LATCH 1
LATCH 0
TOP VIEW
TOP VIEW
Radiation Hardened
LE
LE
Q
Q
Q0
Q
H
L
Spec Number
16
15
14
13
12
11
10
9
File Number
16
15
14
13
12
11
10
9
OUTPUTS
1
1
1
1
2
2
2
Q0
Q1
Q1
E
GND
Q0
Q0
Q1
Q0
Q
H
L
518625
3189.1
1
1
1
1
2
2
2
GND
16(10
Q0
Q1
Q1
E
Q0
Q0
Q1
1(11
14(8
15(9

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hcts75ms Summary of contents

Page 1

... The HCTS75MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radia- tion hardened, high-speed, CMOS/SOS Logic Family. The HCTS75MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART TEMPERATURE ...

Page 2

... VCC = 4.5V, VIH = 2.25V, Functional Test VIL = 0.8V (Note 2) NOTES: 1. All voltages referenced to device GND. 2. For functional tests VO 4.0V is recognized as a logic “1”, and VO Specifications HCTS75MS Reliability Information Thermal Resistance SBDIP Package 10mA Ceramic Flatpack Package . . . . . . . . . . . 25mA Maximum Package Power Dissipation at +125 SBDIP Package ...

Page 3

... The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. Specifications HCTS75MS GROUP (NOTES 1, 2) ...

Page 4

... AC measurements assume RL = 500 , CL = 50pF, Input 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO 4.0V is recognized as a logic “1”, and VO TABLE 5. BURN-IN AND OPERATING LIFE DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH Specifications HCTS75MS (NOTE 1) CONDITIONS TEMPERATURE 0.5V is recognized as a logic “0”. GROUP B SUBGROUP ...

Page 5

... Each pin except VCC and GND will have a resistor of 1K OPEN 14, 15, 16 NOTE: Each pin except VCC and GND will have a resistor of 47K E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Specifications HCTS75MS TABLE 6. APPLICABLE SUBGROUPS METHOD GROUP A SUBGROUPS 100%/5004 ...

Page 6

... Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. HCTS75MS 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition hrs ...

Page 7

... TW = Pulse Width Pulse Width, Setup, Hold Timing Diagram Negative Edge Trigger and Load Circuit TW INPUT VIH VS VIL TH TSU INPUT CP TW VIH VS VIL TH = Hold Time TSU = Setup Time TW = Pulse Width HCTS75MS TPHL TTHL PARAMETER 80% VCC 20% VIH VS VIL GND PARAMETER VCC VIH VS VIL GND ...

Page 8

... (4) VCC ( ( (7) NOTE: The die diagram is a generic plot from a similar HCS device intended to indicate approximate die size and bond pad location. The mask series for the HCTS75 is TA14442A. HCTS75MS HCTS75MS (2) (1) (16) (8) ...

Page 9

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 HCTS75MS EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ...

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