hcts244t Intersil Corporation, hcts244t Datasheet - Page 3

• Manufacturer Part Number: hcts244t
• Description: Radiation Hardened Octal Buffer/line Driver, Three-state
• Manufacturer: Intersil Corporation

Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL:
BACKSIDE FINISH:
Metallization Mask Layout
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask
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out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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series for the HCTS244 is TA14402A.
(2743 m x 2692 m x 533 m 51 m)
108 x 106 x 21mils 2mil
Type: Al Si
Thickness: 11.0k
Unbiased Silicon on Sapphire
Sapphire
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Å
1A1 (4)
1A2 (6)
2Y2 (5)
2Y1 (7)
1k
Å
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3
2Y3
(3)
1A3
(8)
2Y0
(9)
1A0
(2)
HCTS244T
GND
(10)
HCTS244T
1OE
(1)
(11)
2A0
PASSIVATION:
WORST CASE CURRENT DENSITY:
TRANSISTOR COUNT:
PROCESS:
V
(20)
CC
Type: Silox (S
Thickness: 13.0k
< 2.0e5 A/cm
264
CMOS SOS
(12)
1Y3
2OE
(19)
(13)
2A1
2
i
O
2
Å
)
2.6k
Å
(18) 1Y0
(17) 2A3
(16) 1Y1
(15) 2A2
(14) 1Y2