k4h281638d Samsung Semiconductor, Inc., k4h281638d Datasheet - Page 2

• Manufacturer Part Number: k4h281638d
• Description: 128mb D-die X16 Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

128Mb D-die(x16) DDR SDRAM
Revision History
Version 0 (July, 2001)
Version 0.1 (September, 2001)
Version 0.2(October,2001)
Version 0.3(November,2001)
Version 0.31(November,2001)
Version 0.4(November,2001)
- Deleted typical current in IDD spec. table
- Updated DDR333 test specification
- Deleted typical current in IDD spec. table
- Included address and control input setup/hold time(tIS/tIH) at slow slew rate in DDR200/266 AC specification
- Deleted Exit self refresh to write command(tXSW) in DDR200/266 AC specification
- Changed unit of tMRD from tCK to ns at DDR333
- Rename tXSA(exit self refresh to bank active command) to tXSNR(exit self refresh to non read command) at DDR200/266
- Rename tXSR(exit self refresh to read command) to tXSRD at DDR200/266
- Rename tWPREH(DQS in hold time) to tWPRE at DDR200/266
- Rename tREF(Refresh interval time) to tREFI at DDR200/266
- Added tDAL(tWR+tRP)
- Updated current value
- Changed spec to preliminary version
- Changed final spec from preliminary spec.
- Modificated typo.
- Changed pin # 17 from NC to A13 in Package pinout.
- Revised "Write with autoprecharge" table in page 29.
- Added tIS and tPDEX parameters in "power down" timing of page 31.
- Revised "Absolute maximum rating" table in page 38.
- Revised AC parameter table
- Deleted "preliminary"
- Deleted tHZ/tLZ of DQS
- Added DDR333 AC timing table
- First version for internal review
. Changed "Voltage on VDDQ supply relative to VSS" value from -0.5~3.6V to -1~3.6V
. Changed "power dissipation" value from 1.0W to 1.5W.
tHZ(DQS)
tLZ(DQS)
tHZ(DQ)
tLZ(DQ)
tWPST
tPDEX
(tCK)
tACmin
tACmin
-400ps
-400ps
10ns
Min.
0.25
DDR266A
tACmax
tACmax
-400ps
-400ps
Max.
tACmin
tACmin
-400ps
-400ps
10ns
Min.
0.25
DDR266B
From
tACmax
tACmax
-400ps
-400ps
Max.
tACmin
tACmin
-400ps
-400ps
10ns
0.25
Min.
DDR200
- 2 -
tACmax
tACmax
-400ps
-400ps
Max.
7.5ns
-0.75
-0.75
-0.75
-0.75
Min.
0.4
DDR266A
+0.75
+0.75
+0.75
+0.75
Max.
0.6
REV. 0.6 Oct. 21. 2002
7.5ns
-0.75
-0.75
-0.75
-0.75
Min.
0.4
DDR266B
To
+0.75
+0.75
+0.75
+0.75
Max.
0.6
10ns
Min.
-0.8
-0.8
-0.8
-1.1
0.4
DDR200
Max.
+0.8
+0.8
+0.8
-0.8
0.6