k4m563233d-me Samsung Semiconductor, Inc., k4m563233d-me Datasheet - Page 5

• Manufacturer Part Number: k4m563233d-me
• Description: 8mx32 Mobile Sdram 90fbga
• Manufacturer: Samsung Semiconductor, Inc.

K4M563233D-M(E)E/N/I/P
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4M563233D-M(E)E/I**
4. K4M563233D-M(E)N/P**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
C C 2
I
CC2
C C 3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
t
CKE
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
C C D
= 0 mA
= 0 mA
t
= 2CLKs
t
R C
R C
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
IH
Test Condition
(max), t
(max), t
CC
CC
/V
IL
SS
= 10ns
= 10ns
=V
V
V
= 0V, T
V
V
IH
IH
CC
CC
DDQ
IL
IL
(min), t
(min), t
(max), t
(max), t
=
=
/V
SSQ)
A
CC
CC
= -25 C to 85 C for Extended, -40 C to 85 C for Industrial)
CC
CC
= 10ns
= 10ns
-M(E)N/P
-M(E)E/I
=
=
150
190
320
-80
Version
1000
-1H
150
160
300
1.2
1.2
20
10
45
40
8
8
3
Rev. 1.1 Dec. 2002
CMOS SDRAM
140
160
290
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4