k4m51323pc Samsung Semiconductor, Inc., k4m51323pc Datasheet - Page 5
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k4m51323pc
Manufacturer Part Number
k4m51323pc
Description
4m X 32bit X 4 Banks Mobile Sdram In 90fbga
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4M51323PC.pdf
(12 pages)
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DC CHARACTERISTICS
K4M51323PC-S(D)E/G/C/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. It has +/-5 °C tolerance.
4. K4M51323PC-S(D)E/C**
5. K4M51323PC-S(D)G/F**
6. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request.
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Deep Power Down Current
Please contact Samsung for more information.
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
I
CC
CC
CC
CC
CC1
NS
NS
PS CKE & CLK ≤ V
PS CKE & CLK ≤ V
4
5
6
8
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
t
I
Page burst
4Banks Activated
t
ARFC
CKE ≤ 0.2V
Burst length = 1
I
RC
O
CCD
O
= 0 mA
= 0 mA
≥ t
= 2CLKs
≥ t
RC
ARFC
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
(min)
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
-E/C
-G/F
= ∞
= ∞
A
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
CC
CC
CC
CC
TCSR
= 10ns
= 10ns
1/2 of Full
1/4 of Full
1/2 of Full
1/4 of Full
Full Array
Full Array
= ∞
= ∞
100
150
-75
90
45
300
270
255
250
220
205
*3
Version
Mobile-SDRAM
150
-90
0.3
0.3
90
10
25
15
85
10
1
6
3
85/70
600
500
450
500
400
350
150
-1L
90
85
February 2006
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
°C
Note
1
1
2
4
5
6