dmp3120l Diodes, Inc., dmp3120l Datasheet - Page 2

• Manufacturer Part Number: dmp3120l
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes:
DMP3120L
Document number: DS31505 Rev. 2 - 2
4. Short duration pulse test used to minimize self-heating effect.
14
12
10
8
6
4
2
0
Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
Q
I
I
C
Q
V
C
C
GS(th)
d(on)
d(off)
GSS
R
Q
DSS
g
t
t
SD
oss
GD
DSS
iss
rss
GS
fs
G
r
f
G
www.diodes.com
Min
-0.6
-30
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⎯
⎯
⎯
⎯
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⎯
⎯
⎯
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2 of 4
35.3
19.2
Typ
285
5.6
6.8
6.7
3.0
0.8
0.5
56
40
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
14
12
10
8
6
4
2
0
0
±100
Max
-1.4
120
240
-1.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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⎯
⎯
⎯
-1
Fig. 2 Typical Transfer Characteristics
-V
V
DS
GS
= -5V
, GATE SOURCE VOLTAGE (V)
1
Unit
mΩ
nC
μA
nA
pF
pF
pF
ns
V
V
S
V
Ω
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
f = 1.0MHz
V
I
V
V
T = -55°C
D
A
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DS
DS
= -1A, R
T = 25°C
2
A
= -30V, V
= 0V, I
= ±12V, V
= V
= -4.5V, I
= -2.5V, I
= -5V, I
= 0V, I
= -15V, V
= 0V, V
= -15V, V
= -15V, V
= -15V, V
T = 85°C
A
GS
, I
Test Condition
G
D
S
D
GS
D
= 6.0Ω
= -250μA
= -2.0A
= -2.8A
GS
D
D
GS
GS
GS
GS
= -250μA
DS
= 0V
= -2.8A
= -1.8A
3
= 0V
T = 125°C
= 0V
= -4.5V,
= -10V, I
= -4.5V, I
= 0V
A
DMP3120L
T = 150°C
A
© Diodes Incorporated
D
March 2009
D
= -1.0A
4
= -1.0A