bss63r GUANGDONG KEXIN INDUSTRIAL CO.,LTD, bss63r Datasheet
bss63r
Manufacturer Part Number
bss63r
Description
High Voltage Transistor
Manufacturer
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
Datasheet
1.BSS63R.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS63R
Manufacturer:
NXP/恩智浦
Quantity:
20 000
SMD Type
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transitional frequency
Output capacitance
* Pulse test: tp = 300 ìs; d
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Power dissipation
Operating and storage temperature range
Features
Marking
Electrical Characteristics Ta = 25
Absolute Maximum Ratings Ta = 25
SOT23 PNP silicon planar
Marking
Parameter
Parameter
T6
0.02.
High Voltage Transistor
V
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(
BE(
C
I
I
h
CBO
EBO
f
obo
FE
Symbol
T
sat) I
sat) I
T
V
V
V
BSS63R
P
j,
CBO
CEO
EBO
I
T
C
tot
stg
I
I
I
V
V
V
I
I
I
V
C
C
E
C
C
C
C
C
CB
CB
EB
CB
=-10ìA
=-100ìA
=-10ìA
=-25mA, I
=-25mA, I
=-10mA,V
=-25mA,V
=25mA, V
=-6V
=-90V
=-90V,Ta = 150
=-10V, f=1MHz
-55 to +150
Rating
B
B
CE
CE
CE
-110
-100
-100
Testconditons
=-2.5mA
=-2.5mA
330
-6
=-5V, f=35MHz
=-1V
=-1V
mW
Unit
mA
V
V
V
1
0.95
SOT-23
3
+0.1
-0.1
2.9
0.4
1.9
-110
-100
Min
-0.1
+0.1
-0.1
+0.1
-0.1
+0.1
30
30
50
-6
www.kexin.com.cn
Transistors
2
Typ
85
3
-100
-200
-250
-900
Max
-50
1.Base
2.Emitter
3.collector
Unit: mm
MHz
0.1
Unit
nA
ìA
nA
pF
V
V
V
V
V
+0.05
-0.01
1