k9f4008w0a Samsung Semiconductor, Inc., k9f4008w0a Datasheet - Page 8

• Manufacturer Part Number: k9f4008w0a
• Description: 512k X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

AC Timing Characteristics for Command / Address / Data Input
AC Characteristics for Operation
K9F4008W0A-TCB0, K9F4008W0A-TIB0
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Set-up Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Data Transfer from Cell to Register
ALE to RE Delay(ID Delay)
ALE to RE Delay(Read Cycle)
CE low to RE low (ID read)
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High Hold Time
Output Hi-Z to RE Low
CE High to Ready(in case of interception by CE at read)
RE Low to Status Output
CE Low to Status Output
WE High to RE Low
RE access time(Read ID)
Device Resetting Time
NOTE : 1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
(Read/Program/Erase)
Parameter
Symbol
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
WP
WC
WH
CS
CH
DS
DH
8
Symbol
t
t
t
WHRID
t
t
t
t
t
t
RSTO
CSTO
t
t
t
t
WHR
t
t
t
t
CLR
t
REA
RHZ
CHZ
REH
CRY
RST
AR1
AR2
t
WB
t
CR
RR
RP
RC
IR
R
Min
120
50
50
50
50
60
50
50
40
20
40
Min
250
250
100
120
100
20
50
60
40
50
0
0
-
-
-
-
-
-
-
-
FLASH MEMORY
Max
100+tr(R/B)
-
-
-
-
-
-
-
-
-
-
-
5/10/500
Max
200
15
50
30
50
60
70
-
-
-
-
-
-
-
-
-
-
-
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s