m366s3253etu-c7a Samsung Semiconductor, Inc., m366s3253etu-c7a Datasheet - Page 3
![no-image](/images/no-image-200.jpg)
m366s3253etu-c7a
Manufacturer Part Number
m366s3253etu-c7a
Description
Sdram Unbuffered Module
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M366S3253ETU-C7A.pdf
(26 pages)
Ordering Information
Operating Frequencies
Feature
• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V r0.3V power supply
• MRS cycle with address key programs Latency (Access from column address)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
168Pin Unbuffered DIMM based on 256Mb E-die (x8, x16)
128MB, 256MB, 512MB Unbuffered DIMM
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
M366S1654ETS-C7A
M366S3253ETS-C7A
M366S3253ETU-C7A
M374S3253ETS-C7A
M374S3253ETU-C7A
M366S6453ETS-C7A
M366S6453ETU-C7A
M374S6453ETS-C7A
M374S6453ETU-C7A
Maximum Clock Frequency
CL-tRCD-tRP(clock)
Part Number
Density
128MB
256MB
256MB
256MB
256MB
512MB
512MB
512MB
512MB
Organization
16M x 64
32M x 64
32M x 64
32M x 72
32M x 72
64M x 64
64M x 64
64M x 72
64M x 72
133MHz(7.5ns)
3 - 3 - 3
@CL3
16Mx16(K4S561632E) * 4EA
32Mx8(K4S560832E) * 8EA
32Mx8(K4S560832E) * 8EA
32Mx8(K4S560832E) * 9EA
32Mx8(K4S560832E) * 9EA
32Mx8(K4S560832E)*16EA
32Mx8(K4S560832E)*16EA
32Mx8(K4S560832E)*18EA
32Mx8(K4S560832E)*18EA
Component Composition
7A
100MHz(10ns)
2 - 2 - 2
@CL2
Component
54-TSOP(II)
Rev. 1.4 May 2004
Package
SDRAM
1,000mil
1,375mil
1,125mil
1,375mil
1,125mil
1,375mil
1,125mil
1,375mil
1,125mil
Height