m395t5163qz4 Samsung Semiconductor, Inc., m395t5163qz4 Datasheet - Page 4

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m395t5163qz4

Manufacturer Part Number
m395t5163qz4
Description
Ddr2 Fully Buffered Dimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
Table 2 : Performance range
Table 3 : Address Configuration
1.0 FEATURES
Table 1 : Ordering Information
Note :
1. “Z” of Part number(11th digit) stands for Lead-Free and RoHS compliant products.
2. “J” of Part number(11th digit) stands for Dual-Die Package based, Lead-Free and RoHS compliant products.
3. The last digit stands for AMB.
FBDIMM
128Mx8(1Gb) based Module
256Mx4(1Gb) based Module
DDR2 DRAM Speed
CL-tRCD-tRP
M395T2863QZ4-CE66/F76/E76
M395T2863QZ4-CE65
M395T2863QZ4-CE68/F78
M395T2863QZ4-CE69
M395T5663QZ4-CE66/F76/E76
M395T5663QZ4-CE65
M395T5663QZ4-CE68/F78
M395T5663QZ4-CE69
M395T5160QZ4-CE66/F76/E76
M395T5160QZ4-CE65
M395T5160QZ4-CE68
M395T5160QZ4-CE69
M395T5163QZ4-CE68/F78/E78
M395T1G60QJ4-CE68/F78
- 240pin fully buffered dual in-line memory module (FB-
- 3.2Gb/s, 4.0Gb/s link transfer rate
- 1.8V +/- 0.1V Power Supply for DRAM V
- 1.5V +0.075/-0.045V Power Supply for AMB V
- 3.3V +/- 0.3V Power Supply for V
- Buffer Interface with high-speed differential point-to-
- Channel error detection & reporting
- Channel fail over mode support
DIMM)
point Link at 1.5 volt
Part Number
Organization
F7(DDR2-800)
6-6-6
800
Density Organization
1GB
2GB
4GB
8GB
DDSPD
Row Address
A0-A13
A0-A13
128M x 72
256M x 72
512M x 72
1G x 72
DD
/V
DDQ
CC
128Mx8(K4T1G084QQ) *18EA
256Mx4(K4T1G044QQ) *36EA
128Mx8(K4T1G084QQ) *36EA
128Mx8(K4T1G084QQ) *9EA
DDP 512Mx4(K4T2G044QQ)
Component Composition
E7(DDR2-800)
4 of 42
Column Address
5-5-5
800
A0-A9, A11
A0-A9
*36EA
- Serial presence detect with EEPROM
- 8 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5, 6
- Programmable Additive Latency: 0, 1, 2, 3, 4, 5
- Automatic DDR2 DRAM bus and channel calibration
- MBIST and IBIST Test functions
- Hot add-on and Hot Remove Capability
- Transparent mode for DRAM test support
Number
of Rank
Bank Address
1
2
2
4
4
BA0-BA2
BA0-BA2
E6(DDR2-667)
5-5-5
Montage D1
Montage D1
Montage D1
667
Intel D1
Intel D1
Intel D1
IDT C1
IDT C1
IDT C1
IDT L4
IDT L4
IDT L4
IDT L4
IDT L4
Rev. 1.3 December 2008
AMB
DDR2 SDRAM
Full Module
Spreader
Type of
Auto Precharge
Heat
A10
A10
Mbps
Unit
CK
30.35mm
Height

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