m391t5263az3 Samsung Semiconductor, Inc., m391t5263az3 Datasheet - Page 14

• Manufacturer Part Number: m391t5263az3
• Description: Ddr2 Unbuffered Sdram Module
• Manufacturer: Samsung Semiconductor, Inc.

14.1 Refresh Parameters by Device Density
14.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
14.0 Electrical Characteristics & AC Timing for DDR2-800/667/533
UDIMM
Refresh to active/Refresh command time
Average periodic refresh interval
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
tRCD
tRP
tRC
tRAS
13.0 Input/Output Capacitance
Note : DM is internally loaded to match DQ and DQS identically.
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Bin
(CL - tRCD - tRP)
Parameter
(0 °C < T
Speed
Parameter
OPER
< 95 °C; V
Parameter
Non-ECC
ECC
3.75
12.5
12.5
57.5
min
2.5
45
5
DDR2-800(E7)
-
DDQ
5 - 5 - 5
= 1.8V + 0.1V; V
70000
max
8
8
8
-
-
-
-
tRFC
tREFI
3.75
85 °C < T
min
DD
2.5
0 °C ≤ T
15
15
60
45
3
DDR2-800(F7)
-
Symbol
= 1.8V + 0.1V)
6 - 6- 6
CCK0
CCK1
CCK2
CI
CI
CIO
CCK0
CCK1
CCK2
CI
CI
CIO
1
2
1
2
CASE
CASE
14 of 19
Symbol
70000
max
≤ 85°C
≤ 95°C
8
8
8
-
-
-
-
3.75
256Mb
min
15
15
60
45
5
3
DDR2-667(E6)
-
7.8
3.9
75
5 - 5 - 5
Min
-
-
-
-
-
-
-
-
-
-
-
-
512Mb
70000
M378T5263AZ(H)3
M391T5263AZ(H)3
105
max
7.8
3.9
8
8
8
-
-
-
-
127.5
1Gb
7.8
3.9
3.75
3.75
min
15
15
60
45
(V
5
DDR2-533(D5)
-
DD
DDR2 SDRAM
Max
4 - 4 - 4
Rev. 1.1 July 2008
26
28
28
42
42
10
28
28
28
44
44
10
=1.8V, V
2Gb
195
7.8
3.9
70000
max
DDQ
8
8
8
-
-
-
-
327.5
4Gb
7.8
3.9
=1.8V, T
Units
Units
pF
pF
Units
A
Units
ns
ns
ns
ns
ns
ns
ns
ns
=25
ns
µs
µs
o
C)