hys64v64220gbdl Infineon Technologies Corporation, hys64v64220gbdl Datasheet

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hys64v64220gbdl

Manufacturer Part Number
hys64v64220gbdl
Description
So-dimm Sdram Modules
Manufacturer
Infineon Technologies Corporation
Datasheet
144 pin SO-DIMM SDRAM Modules
512 MB PC100 / PC133
INFINEON Technologies
u144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules
for notebook applications
Two bank 64M x 64 non-parity module organisation
suitable for use in PC100 and PC133 applications
Performance:
Single +3.3V(± 0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
Uses sixteen 256Mbit SDRAM (32Mb x8 ) components in P-TFBGA packages
8196 refresh cycles every 64 ms
Gold contact pad, JEDEC MO-190 outline dimensions
This module family is fully pin and functional compatible
Importante Notice:
This SO-DIMM module is based on 256Mbit SDRAM technology and can be
used in applications only, where 256Mbit addressing is supported.
with the latest INTEL SO-DIMM specification
f
t
CK
AC
Clock frequency (max.)
Clock access time
CAS latency = 2 & 3
2
PROM
PC133
2-2-2
133
5.4
-7
1
PC133
3-3-3
-7.5
133
5.4
HYS64V64220GBDL-7/7.5/8-D
PC100
2-2-2
100
-8
6
Units
MHz
ns
2002-08-06

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hys64v64220gbdl Summary of contents

Page 1

... This module family is fully pin and functional compatible • with the latest INTEL SO-DIMM specification Importante Notice: • This SO-DIMM module is based on 256Mbit SDRAM technology and can be used in applications only, where 256Mbit addressing is supported. INFINEON Technologies HYS64V64220GBDL-7/7.5/8-D -7 -7.5 PC133 PC133 2-2-2 3-3-3 133 133 5 ...

Page 2

... HYS64V64220GBDL-7.5-D 16 32Mx8 64M x 64 HYS64V64220GBDL-8-D Note: All partnumbers end with a place code (not shown), designating the die revision. Consult factory for current revision. Example: HYS64V64220GBDL-8-D, indicating Rev.D dies are used for SDRAM components. Card Dimensions Organisation 64M x 64 Pin Names A0-A12 ...

Page 3

... DQ45 121 DQ46 123 DQ47 125 Vss 127 NC 129 NC 131 CKE0 133 VDD 135 CAS 137 CKE1 139 A12 141 (A13) 143 3 HYS64V64220GBDL-7/7.5/8-D Front Back PIN # Side Side NC 74 CLK1 Vss 76 Vss VDD 82 VDD DQ16 84 DQ48 DQ17 86 ...

Page 4

... DQ0-DQ7 DQ(39:32) DQM DQMB5 DQ(47:40) DQ0-DQ7 DQM DQMB6 DQ(55:48) DQ0-DQ7 DQM DQMB7 DQ(63:56) DQ0-DQ7 Loads 4 HYS64V64220GBDL-7/7.5/8-D CS DQM DQM DQ0-DQ7 DQ0-DQ7 DQM DQM DQ0-DQ7 DQ0-DQ7 D2 CS DQM DQM DQ0-DQ7 DQ0-DQ7 DQM DQM DQ0-DQ7 DQ0-DQ7 PROM (256wordx8bit) SA0 SA1 ...

Page 5

... Symbol Limit Values 64M x 64 max HYS64V64220GBDL-7/7.5/8-D Limit Values Unit min. max. – 1.0 4.6 V – 1.0 4 -55 +125 – – Symbol Limit Values min. max. V 2.0 VDD+0 – 0.5 0.8 IL 2.4 – ...

Page 6

... PC100 modules. Input signals are changed once during tck, excepts for ICC6 and for standby currents when tck=infinity. 2. These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is assumed and the data-out current is excluded. Infineon Technologies HYS64V64220GBDL-7/7.5/8-D 144 pin SO-DIMM SDRAM Modules Symb. PC133 ICC1 1840 tck = min ...

Page 7

... IH t 1.5 – 1.5 CKS t 0.8 – 0.8 CKH t 2 – 2 RSC – 20 RCD t 15 – HYS64V64220GBDL-7/7.5/8-D Unit -7.5 -8 PC100- 333 222 max. min. max. – 8 – ns – 10 – ns 133 – 125 MHz 100 – 100 MHz 5.4 – – – ...

Page 8

... – – 2 – DQZ t 14 – DAL,min t 0 – 0 DQW 8 HYS64V64220GBDL-7/7.5/8-D Unit -7.5 -8 PC100- 333 222 max. min. max 100k 100k – – – 16 – ns – 1 – CLK 64 – – ...

Page 9

... T − has to be added to this parameter 4.6 ns for PC133 components with no termination and 0 pF load, = 2.4 V with the timing referenced to the 1.4 V crossover ih and HYS64V64220GBDL-7/7.5/8 2.4 V with the timing referenced and IH I Measurement conditions for t t ...

Page 10

... AC output load circuit shown.Specified tac and toh parameters are measured with a 50pF only, without any resistive termination and with a input signal edge rate between 0.8V and 2.0 V. Infineon Technologies HYS64V64220GBDL-7/7.5/8-D 144 pin SO-DIMM SDRAM Modules 10 2002-08-06 ...

Page 11

... CL=2 25 SDRAM Cycle Time SDRAM Access Time from Clock at CL=1 27 Minimum Row Precharge Time Infineon Technologies HYS64V64220GBDL-7/7.5/8-D 144 pin SO-DIMM SDRAM Modules 2 PROM - is assembled onto the module. Information 2 PROM device during module 2 C synchronous 2-wire bus) SPD Entry Value 64Mx64 ...

Page 12

... Superset information 62 SPD Revision 63 Checksum for bytes 64- Manufactures’s information (optional) 125 126 Frequency Specification 127 Details 128+ Unused storage locations Infineon Technologies HYS64V64220GBDL-7/7.5/8-D 144 pin SO-DIMM SDRAM Modules SPD Entry Value Hex 64Mx64 -7 14/15/ 15/ 42/ 256 ...

Page 13

... Package Outlines 512 MByte SO-DIMM Module package (JEDEC MO-190) (144 pin, dual in-line memory module (3.3) 23.2 24.5 1.5 (3. Infineon Technologies HYS64V64220GBDL-7/7.5/8-D 144 pin SO-DIMM SDRAM Modules ± 0.15 67.6 3.8 max. 63.6 heat spreader 61 143 ± 0.1 1 32.8 2.5 4.6 1.8 62 144 Note: All tolerances according to JEDEC standard 13 Detail of Contacts ...

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