hys64d32301hu Qimonda, hys64d32301hu Datasheet - Page 21
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hys64d32301hu
Manufacturer Part Number
hys64d32301hu
Description
184-pin Unbuffered Double Data Rate Sdram
Manufacturer
Qimonda
Datasheet
1.HYS64D32301HU.pdf
(39 pages)
1) 0 °C ≤ T
2) Input slew rate ≥ 1 V/ns for DDR400, DDR333
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals
4) Inputs are not recognized as valid until V
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is V
6) For each of the terms, if not already an integer, round to the next highest integer. t
7) t
Rev. 1.21, 2006-09
03292006-RA8T-MSZL
Parameter
Address and control input setup
time
Data-out low-impedance time
from CK/CK
Mode register set command
cycle time
DQ/DQS output hold time
Data hold skew factor
Active to Autoprecharge delay
Active to Precharge command
Active to Active/Auto-refresh
command period
Active to Read or Write delay
Average Periodic Refresh
Interval
Auto-refresh to Active/Auto-
refresh command period
Precharge command period
Read preamble
Read postamble
Active bank A to Active bank B
command
Write preamble
Write preamble setup time
Write postamble
Write recovery time
Internal write to read command
delay
Exit self-refresh to non-read
command
Exit self-refresh to read
command
other than CK/CK, is V
voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
HZ
and t
A
LZ
≤ 70 °C; V
transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific
DDQ
REF
= 2.5 V ± 0.2 V, V
. CK/CK slew rate are ≥ 1.0 V/ns.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
IS
LZ
MRD
QH
QHS
RAP
RAS
RC
RCD
REFI
RFC
RP
RPRE
RPST
RRD
WPRE
WPRES
WPST
WR
WTR
XSNR
XSRD
REF
DD
stabilizes.
= +2.5 V ± 0.2 V (DDR333); V
–5
DDR400B
Min.
0.6
–0.7
2
t
—
t
40
55
15
—
65
15
0.9
0.40
10
0.25
0
0.40
15
2
75
200
0.7
HP
RCD
– t
QHS
27
Max.
—
—
+0.7
—
—
+0.50
—
70E+3
—
—
7.8
—
—
1.1
0.60
—
—
—
0.60
—
—
—
—
DDQ
= 2.6 V ± 0.1 V, V
–6
DDR333
Min.
0.75
0.8
–0.7
2
t
—
t
42
60
18
—
72
18
0.9
0.40
12
0.25
0
0.40
15
1
75
200
HP
RCD
CK
– t
is equal to the actual system clock cycle time.
QHS
HYS[64/72]D[16/32/128]3xxHU–[5/6]–C
Unbuffered DDR SDRAM Modules
DD
= +2.6 V ± 0.1 V (DDR400)
Max.
—
—
+0.7
—
—
+0.55
—
70E+3
—
—
7.8
—
—
1.1
0.60
—
—
—
0.60
—
—
—
—
Unit
ns
ns
ns
t
ns
ns
ns
ns
ns
ns
µs
ns
ns
t
t
ns
t
ns
t
ns
t
ns
t
CK
CK
CK
CK
CK
CK
CK
Internet Data Sheet
Note/ Test
Condition
fast slew rate
3)4)5)6)10)
slow slew rate
3)4)5)6)10)
2)3)4)5)7)
2)3)4)5)
2)3)4)5)
TSOPII
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)8)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)11)
2)3)4)5)12)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
TT
.
2)3)4)5)
1)