hys64t32000hm-5-a Infineon Technologies Corporation, hys64t32000hm-5-a Datasheet - Page 19

• Manufacturer Part Number: hys64t32000hm-5-a
• Description: 240-pin Registered Ddr2 Sdram Modules
• Manufacturer: Infineon Technologies Corporation

3
3.1
Table 9
Parameter
Voltage on any pins relative to
Voltage on
Voltage on
Storage Humidity (without condensation) H
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
3.2
Table 10
Parameter
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
4) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below
5) Up to 3000 m.
Data Sheet
85 °C Case Temperature before initiating Self-Refresh operation.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values maycause
irreversible damage to the integrated circuit.
V
V
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
DC Operating Conditions
Operating Conditions
DD
DDQ
relative to
relative to
V
V
SS
SS
V
SS
Symbol
V
V
V
IN
DD
DDQ
STG
,
V
OUT
Symbol
T
T
T
PBar
H
OPR
CASE
STG
OPR
19
Values
Min.
– 0.5
– 1.0
– 0.5
5
Values
Min.
0
0
– 50
69
10
HYS64T[32/64]0[0/2]0HM–[3S/3.7/5]–A
Micro-DIMM DDR2 SDRAM Modules
Max.
2.3
2.3
2.3
95
Max.
+65
+95
+100
105
90
Unit
V
V
V
%
Electrical Characteristics
Unit
°C
°C
°C
%
kPa
03242004-2CBE-IJ2X
t
REFI
Note/Test
Condition
Rev. 1.1, 2005-10
= 3.9 s
Note
1)2)3)4)
5)