m470l2923bn0-ca2 Samsung Semiconductor, Inc., m470l2923bn0-ca2 Datasheet - Page 10

• Manufacturer Part Number: m470l2923bn0-ca2
• Description: Sdram Unbuffered Module Unbuffered Module Based 512mb B-die
• Manufacturer: Samsung Semiconductor, Inc.

9.0 DDR SDRAM IDD spec table
9.1 M470L3324BT(U)0 [ (32M x 64) 256MB Module ]
9.2 M470L6524BT(U)0 [ (64M x 64) 512MB Module ]
256MB, 512MB, 1GB Unbuffered SODIMM
IDD6
IDD6
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
1,120
1,060
1,800
1,060
1,160
1,320
1,520
1,460
2,200
660
760
100
200
120
220
400
920
240
440
800
20
20
12
40
40
24
1,000
1,620
1,060
1,200
1,820
500
620
120
100
120
200
780
860
700
820
240
200
240
400
980
20
20
12
40
40
24
1,440
1,160
1,640
960
440
560
120
120
200
680
760
960
640
760
240
160
240
400
880
20
80
20
12
40
40
24
1,440
1,160
1,640
440
560
120
120
200
680
760
960
640
760
240
160
240
400
880
960
20
80
20
12
40
40
24
Rev. 1.5 June 2005
DDR SDRAM
(V
(V
DD
DD
=2.7V, T = 10°C)
Unit
=2.7V, T = 10°C)
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
Optional
Notes
Notes