m393t5160qza Samsung Semiconductor, Inc., m393t5160qza Datasheet - Page 15
![no-image](/images/no-image-200.jpg)
m393t5160qza
Manufacturer Part Number
m393t5160qza
Description
240pin Registered Module Based On 1gb Q-die 72-bit Ecc
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M393T5160QZA.pdf
(29 pages)
RDIMM
11.0 Operating Current Table
11.1 M393T2863QZA / M393T2863QZ3 : 1GB(128Mx8 *9) Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
11.2 M393T2863QZA : 1GB(128Mx8 *9) Module
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
IDD3P-F
IDD3P-S
IDD3P-F
IDD3P-S
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD5B
IDD2P
IDD5B
IDD6*
IDD6*
IDD0
IDD1
IDD7
IDD0
IDD1
IDD7
E7(800@CL=5)
E7(800@CL=5)
1,035
1,215
1,305
2,250
1,265
1,405
1,035
1,555
1,805
1,975
2,940
675
765
135
270
315
315
162
495
135
615
800
795
865
712
135
- considering Register and PLL current value
F7(800@CL=6)
F7(800@CL=6)
1,035
1,215
1,305
2,250
1,265
1,405
1,035
1,555
1,805
1,975
2,940
675
765
135
270
315
315
162
495
135
615
800
795
865
712
135
15 of 29
E6(667@CL=5)
E6(667@CL=5)
1,080
1,260
2,070
1,130
1,270
1,395
1,590
1,810
2,650
630
720
135
270
315
315
162
450
945
135
575
730
735
785
632
920
135
D5(533@CL=4)
D5(533@CL=4)
1,215
2,070
1,135
1,235
1,330
1,645
2,540
585
675
135
270
315
315
162
405
855
900
135
995
535
660
675
705
552
805
135
CC(400@CL=3)
CC(400@CL=3)
1,170
2,025
1,045
1,120
1,205
1,480
2,385
585
675
135
270
315
315
162
405
810
855
135
905
495
590
615
625
472
735
135
DDR2 SDRAM
Rev. 1.1 July 2008
(T
(T
Units
Units
A
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
=0
=0
o
o
C, V
C, V
DD
DD
Notes
Notes
= 1.9V)
= 1.9V)