m368l3324dus-lcc Samsung Semiconductor, Inc., m368l3324dus-lcc Datasheet - Page 18
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m368l3324dus-lcc
Manufacturer Part Number
m368l3324dus-lcc
Description
Ddr Sdram Unbuffered Module
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M368L3324DUS-LCC.pdf
(25 pages)
14.0 Component Notes
10. The output timing reference voltage level is V
11. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage
12. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys tem performance
13. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A valid transition is
14. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
15. For command/address input slew rate ≥ 1.0 V/ns
16. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns
17. For CK & CK slew rate ≥ 1.0 V/ns
18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester
19. Slew Rate is measured between V
20. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater
21. tQH = tHP - tQHS, where:
22. tDQSQ - Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle.
23. tDAL = (tWR/tCK) + (tRP/tCK)
256MB, 512MB, 1GB Unbuffered DIMM
3. Figure 1 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise rep-
4. AC timing and IDD tests may use a V
5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result of the signal crossing
1. All voltages referenced to V
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related speci-
6. Inputs are not recognized as valid until V
7. Enables on.chip refresh and address counters.
8. IDD specifications are tested after the device is properly initialized.
9. The CK/CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross; the input reference level for signals other
fications and device operation are guaranteed for the full voltage range specified.
resentation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or
other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions
(generally a coaxial transmission line terminated at the tester electronics).
point for CK/CK), and parameter specifications are guaranteed for the specified ac input levels under normal use conditions. The minimum slew rate
for the input signals is 1 V/ns in the range between V
the ac input level and will remain in that state as long as the signal does not ring back above (below) the dc input LOW (HIGH) level.
than CK/CK, is V
level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
(bus turnaround) will degrade accordingly.
defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ ously in progress on the bus, DQS will
be transitioning from High- Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this
time, depending on tDQSS.
correlation.
than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the
clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces.
tortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst case pull-in of DQ on the next transi-
tion, both of which are, separately, due to data pin skew and output pattern effects, and p channel to n-channel variation of the output drivers.
ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3) tDAL = 5 clocks
For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and tCK=7.5ns tDAL = (15
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The pulse duration dis-
REF
.
SS
.
OH
IL
(AC) and V
to V
REF
IH
stabilizes. Exception: during the period before V
swing of up to 1.5 V in the test environment, but input timing is still referenced to V
TT
.
OL
(AC).
IL
Output
(V
Figure 1 : Timing Reference Load
(AC) and V
OUT
)
IH
(AC).
16 of 23
V
DDQ
50Ω
30pF
REF
stabilizes, CKE ≤ 0.2V
Rev. 1.1 September 2006
DDQ
DDR SDRAM
is recognized as LOW.
REF
(or to the crossing