m464s0924ct1 Samsung Semiconductor, Inc., m464s0924ct1 Datasheet - Page 5
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m464s0924ct1
Manufacturer Part Number
m464s0924ct1
Description
8mx64 Sdram Sodimm Based On 8mx16, 4banks, 4k Refresh, 3.3v Synchronous Drams With Spd
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M464S0924CT1.pdf
(9 pages)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Notes :
M464S0924CT1
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
A
IL
IL
Test Condition
= 0 to 70 C)
(max), t
(max), t
IH
CC
CC
/V
= 10ns
= 10ns
IL
V
V
=V
V
V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
DDQ
(max), t
(max), t
=
=
/V
CC
CC
SSQ
CC
CC
= 10ns
= 10ns
)
=
=
C
L
-1H
Rev. 0.0 April. 2000
Version
PC100 SODIMM
560
120
580
840
3.2
80
28
20
20
80
4
4
6
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Not
e
1
1
2