k9f1g08u0m-y Samsung Semiconductor, Inc., k9f1g08u0m-y Datasheet - Page 38

• Manufacturer Part Number: k9f1g08u0m-y
• Description: 128m X 8 Bit / 64m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 16). Its value can be
determined by the following guidance.
V
CC
GND
Device
K9F1G16Q0M
K9F1G16D0M
open drain output
R/B
Rp
Figure 16. Rp vs tr ,tf & Rp vs ibusy
ibusy
C
L
Ready Vcc
38
tf
1.8V device - V
2.65V device - V
3.3V device - V
VOL
OL
OL
Busy
OL
: 0.1V, V
: 0.4V, V
: 0.4V, V
FLASH MEMORY
OH
OH
OH
: V
: 2.4V
: Vccq-0.4V
CC
q-0.1V
tr
VOH