k9f1208u0b-y Samsung Semiconductor, Inc., k9f1208u0b-y Datasheet - Page 2

• Manufacturer Part Number: k9f1208u0b-y
• Description: 64m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1208R0B
K9F1208B0B
K9F1208U0B
64M x 8 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
(*K9F1208R0B : tRC = 60ns(Min.)
GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200 s on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns(K9F1208R0B : 60ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output
as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B s
extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable appli-
cations requiring non-volatility.
- Memory Cell Array : (64M + 2048K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
- Page Size : (512 + 16)Byte
- Random Access
- Serial Page Access : 50ns(Min.)
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
- 1.8V device(K9F1208R0B) : 1.65~1.95V
- 2.7V device(K9F1208B0B) : 2.5~2.9V
- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
K9F1208R0B-G,J
K9F1208B0B-Y,P
K9F1208B0B-G,J
K9F1208U0B-Y,P
K9F1208U0B-G,J
K9F1208U0B-V,F
Part Number
: 15 s(Max.)
1.65 ~ 1.95V
2.5 ~ 2.9V
2.7 ~ 3.6V
Vcc Range
2
- Program time : 200 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
- K9F1208X0B-YCB0/YIB0
- K9F1208X0B-GCB0/GIB0
- K9F1208U0B-VCB0/VIB0
- K9F1208X0B-PCB0/PIB0
- K9F1208X0B-JCB0/JIB0
- K9F1208U0B-FCB0/FIB0
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
63- Ball FBGA (8.5 x 13 , 1.0 mm width)
48 - Pin WSOP I (12X17X0.7mm)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
63- Ball FBGA - Pb-free Package
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0B-V,F(WSOPI ) is the same device as
K9F1208U0B-Y,P(TSOP1) except package type.
PKG Type
WSOP1
TSOP1
TSOP1
FBGA
FBGA
FBGA
: 100K Program/Erase Cycles
FLASH MEMORY
Preliminary