srf820h Advanced Semiconductor, Inc., srf820h Datasheet
srf820h
Manufacturer Part Number
srf820h
Description
Npn Silicon Rf Power Transistor
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
1.SRF820H.pdf
(1 pages)
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200
CHARACTERISTICS
DESCRIPTION:
The
High Power Class C Amplifier
applications, in 225 to 400 MHz
Military Communication Equipment.
FEATURES:
quads
MAXIMUM RATINGS
P
SYMBOL
V
V
V
Internal Input Matching Network
P
Omnigold™ Metalization System
Available in matched pairs and
T
T
DISS
I
CBO
CEO
EBO
STG
G
BV
BV
BV
JC
C
J
P
I
C
ASI SRF820H
h
= 8.4 dB at 70 W/400 MHz
CBO
P
OUT
FE
OB
CEO
CBO
EBO
G
NPN SILICON RF POWER TRANSISTOR
220 W @ T
-65 °C t o +200 °C
-65 °C t o +150 °C
I
I
I
V
V
V
V
C
C
E
CB
CE
CB
CC
= 50 mA
= 50 mA
= 10 mA
1.25 °C/ W
= 30 V
= 5.0 V
= 28 V
= 28 V
8.0 A
4.0 V
60 V
30 V
is Designed for
C
NONETEST CONDITIONS
T
= 25 °C
C
= 25 ° C
P
I
C
IN
= 2.0 A
= 70 W
Specifications are subject to change without notice.
f = 400 MHz
f = 1.0 MHz
1 = COLLECTOR
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
PACKAGE STYLE .500 6L FLG
ORDER CODE: ASI10474
MINIMUM TYPICAL MAXIMUM
FAX (818) 765-3004
.490 / 12.45
.835 / 21.21
.970 / 24.64
.150 / 3.43
.210 / 5.33
.200 / 5.08
.003 / 0.08
.090 / 2.29
.120 / 3.05
.150 / 3.81
M INIM UM
inches / m m
4.0
8.4
30
60
20
70
D
G
H
2 = BASE
4
B
C
.725/18,42
.725 / 18.42
.045 / 1.14
.125 / 3.18
J
A
F
I
1
2
E
3
3 & 4 = EMITTER
.865 / 21.97
.510 / 12.95
.980 / 24.89
M A XIM UM
.160 / 4.06
.220 / 5.59
.210 / 5.33
.007 / 0.18
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
inches / m m
2x ØN
FU LL R
K
5.0
L
80
80
SRF820H
M
UNITS
mA
REV. A
pF
dB
---
W
V
V
V
1/1
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