k4h1g0838m Samsung Semiconductor, Inc., k4h1g0838m Datasheet - Page 15

• Manufacturer Part Number: k4h1g0838m
• Description: 1gb M-die Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

DDR SDRAM 1Gb M-die (x4, x8)
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
TBD
TBD
TBD
TBD
Rev. 1.1 June. 2005
Specification
DDR333
TBD
TBD
TBD
TBD
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V