k4s513233f Samsung Semiconductor, Inc., k4s513233f Datasheet - Page 5

• Manufacturer Part Number: k4s513233f
• Description: Mobile Sdram
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
K4S513233F - M(E)C/L/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported(In commercial Temp : Max 40 C/Max 70 C).
4. K4S513233F-M(E)C**
5. K4S513233F-M(E)L**
6. K4S513233F-M(E)F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC
CC
CC
PS CKE & CLK
NS
PS CKE & CLK
NS
4
5
6
N
N
P
P
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
t
CKE
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
CCD
O
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
V
V
V
V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
-F
(max), t
(max), t
5
=
=
A
= -25 to 70 C)
1/2 of Full Array
1/4 of Full Array
Internal TCSR
CC
CC
CC
CC
-C
-L
Full Array
= 10ns
= 10ns
=
=
120
170
300
-75
Max 40
900
800
700
Version
1500
1200
Mobile SDRAM
-1H
120
150
280
1.0
1.0
20
10
45
30
8
4
Max 70
1200
900
800
110
150
240
-1L
September 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
C
Note
1
1
2
4
5
3
6