k4s51153lf Samsung Semiconductor, Inc., k4s51153lf Datasheet - Page 5

• Manufacturer Part Number: k4s51153lf
• Description: 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
K4S51153LF - Y(P)C/L/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported(In commercial Temp : Max 40qC/Max 70qC).
4. K4S51153LF-Y(P)C**
5. K4S51153LF-Y(P)L**
6. K4S51153LF-Y(P)F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC
CC
CC
PS CKE & CLK dV
NS
PS CKE & CLK dV
NS
4
5
6
N
N
P
P
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
CKE dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
t
CKE d0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
CCD
O
= 0 mA
= 0 mA
tt
tt
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS tV
(min), CLK dV
(min), CS tV
(min), CLK dV
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
-F
(max), t
(max), t
5
= f
= f
A
= -25 to 70qC)
1/2 of Full Array
1/4 of Full Array
Internal TCSR
CC
CC
CC
CC
-C
-L
Full Array
= 10ns
= 10ns
= f
= f
110
160
-75
Max 40
70
900
800
700
Version
1500
1200
Mobile SDRAM
-1H
100
150
1.0
1.0
70
20
10
45
30
8
4
Max 70
1200
900
800
100
130
-1L
65
September 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
qC
uA
Note
1
1
2
4
5
3
6