k4s511632b-ul75 Samsung Semiconductor, Inc., k4s511632b-ul75 Datasheet - Page 7

• Manufacturer Part Number: k4s511632b-ul75
• Description: 512mb B-die Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

SDRAM 512Mb B-die (x4, x8, x16)
ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x4 : DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V d V
0
Parameter
~ DQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is d 3ns.
(max) = 5.6V AC. The overshoot voltage duration is d 3ns.
3
supply relative to Vss
), (x8 : DQ
(V
DD
0
Pin
IN
= 3.3V, T
~ DQ
d V
DDQ
7
), (x16 : DQ
V
Symbol
DD
A
.
V
= 23qC, f = 1MHz, V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
0
~ DQ
15
V
V
Symbol
Min
-0.3
DD
)
3.0
2.0
2.4
-10
IN
-
T
, V
I
, V
P
STG
OS
REF
D
OUT
SS
DDQ
Symbol
C
C
C
=1.4Vr200 mV)
= 0V, T
C
ADD
OUT
CLK
IN
A
Typ
3.3
3.0
= 0 to 70qC)
0
-
-
-
Min
2.5
2.5
2.5
4.0
V
DD
Max
-55 ~ +150
3.6
0.8
0.4
-1.0 ~ 4.6
-1.0 ~ 4.6
10
-
+0.3
Value
50
Revision. 1.1 August 2004
1
Max
3.5
3.8
3.8
6.0
Unit
uA
V
V
V
V
V
CMOS SDRAM
Unit
pF
pF
pF
pF
I
I
OH
OL
Unit
mA
qC
W
V
V
Note
= -2mA
= 2mA
1
2
3
Note