k4s56323lf Samsung Semiconductor, Inc., k4s56323lf Datasheet - Page 10

• Manufacturer Part Number: k4s56323lf
• Description: 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
• Manufacturer: Samsung Semiconductor, Inc.

K4S56323LF - F(H)E/N/S/C/L/R
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.)
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. Full Page Length : x32 : 64Mb(256) , 128Mb (256), 256Mb (512), 512Mb (512)
Function
Function
A8
A9
BA1
Address
0
0
1
1
0
1
Address
0
0
1
1
Write Burst Length
A7
0
1
0
1
BA0
A11~A10/AP
0
1
0
1
Test Mode
Mode Register Set
BA1
Single Bit
Mode Select
0
Length
"0" Setting for
Normal MRS
Burst
BA0 ~ BA1
Reserved
Reserved
Reserved
Type
BA0
Reserved Address
A11 ~ A10/AP
A9
Mode Select
0
A6
EMRS for Mobile SDRAM
0
0
0
0
1
1
1
1
A11 ~ A10/AP
RFU
A8
A5
0
0
0
1
1
0
0
1
1
Normal MRS
CAS Latency
Reserved
Reserved
*1
Mode
A4
A7
0
0
1
0
1
0
1
0
1
A9
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
A6
W.B.L
0
A9
RFU
1
2
3
*2
A8
*1
A5
0
A8
Test Mode
BA1 BA0
A3
0
1
0
A7
10
A4
0
Mode Select
Burst Type
A7
0
Sequential
Interleave
A6
A3
Type
0
mal MRS
for Nor-
Setting
A6
Mode
CAS Latency
A2
A5
0
0
0
0
1
1
1
1
A5
A2
A1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
A4
RFU
A4
A1
0
0
1
1
0
0
1
1
A0
0
1
0
1
0
1
0
1
*1
A3
Mobile-SDRAM
A0
A3
BT
Burst Length
0
1
0
1
0
1
0
1
PASR
Size of Refreshed Array
Full Page
Reserved
Reserved
Reserved
A2
1/2 of Full Array
1/4 of Full Array
BT=0
A2
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
Burst Length
PASR
*3
A1
A1
May 2004
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0