k4s56163pf Samsung Semiconductor, Inc., k4s56163pf Datasheet - Page 11

k4s56163pf

Manufacturer Part Number

k4s56163pf

Description

4m X 16bit X 4 Banks Mobile Sdram In 54fbga

Manufacturer

Samsung Semiconductor, Inc.

Datasheet

1.K4S56163PF.pdf (12 pages)

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K4S56163PF - R(B)G/F

Partial Array Self Refresh

1. In order to save power consumption, Mobile SDRAM has PASR option.

2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : full array, 1/2 of full array, 1/4 of full array.

Internal Temperature Compensated Self Refresh (TCSR)

Note :

1. In order to save power consumption, Mobile-SDRAM includes the internal temperature sensor and control units to control the

2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.

B. POWER UP SEQUENCE

1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.

2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.

3. Issue precharge commands for all banks of the devices.

4. Issue 2 or more auto-refresh commands.

5. Issue a mode register set command to initialize the mode register.

6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.

EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.

The default state without EMRS command issued is half driver strength and full array refreshed.

The device is now ready for the operation selected by EMRS.

For operating with DS or PASR , set DS or PASR mode in EMRS setting stage.

In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not

needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.

- Apply VDD before or at the same time as VDDQ.

Commercial).

self refresh cycle automatically according to the two temperature range ; Max 40 C and Max 85 C(for Extended), Max 70 C(for

Temperature Range

Max. 70/85 C

Max. 40 C

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

BA1=0

BA0=0

BA1=1

BA0=0

- Full Array

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

BA1=0

BA0=1

BA1=1

BA0=1

Full Array

200

450

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

BA1=0

BA0=0

BA1=1

BA0=0

Self Refresh Current (Icc 6)

- 1/2 Array

1/2 of Full Array

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

BA1=1

BA0=1

BA1=0

BA0=1

160

300

1/4 of Full Array

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

x x x x x x x x x x x x x x x x x x x x x x x x x x x x x

140

250

BA1=0

BA0=0

BA1=1

BA0=0

Mobile-SDRAM

- 1/4 Array

Partial Self Refresh Area

BA1=0

BA0=1

BA1=1

BA0=1

September 2004

Unit

k4s56163pf Samsung Semiconductor, Inc., k4s56163pf Datasheet - Page 11

k4s56163pf

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