k4s560832b Samsung Semiconductor, Inc., k4s560832b Datasheet - Page 6

• Manufacturer Part Number: k4s560832b
• Description: 256mbit Sdram 8bit Banks Synchronous Dram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
K4S560832B
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active Standby current
in power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S560832B-TC**
4. K4S560832B-TL**
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IH
IH
IH
IH
(min)
(min)
IL
IL
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
Test Condition
IL
IL
A
(max), t
(max), t
CC
CC
= 0 to 70 C)
IH
= 10ns
= 10ns
V
V
/V
IH
V
IH
V
IL
CC
CC
IL
IL
(min), t
(min), t
=V
(max), t
(max), t
=
=
DDQ
CC
CC
/V
CC
CC
SSQ
= 10ns
= 10ns
=
=
).
C
L
120
140
220
-75
Version
-1H
110
115
210
16
14
30
25
2
2
6
6
3
2
Rev. 0.2 May.2000
CMOS SDRAM
110
115
210
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3
4