k4s643232c Samsung Semiconductor, Inc., k4s643232c Datasheet - Page 28

• Manufacturer Part Number: k4s643232c
• Description: 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

DQ
CLOCK
K4S643232C
Read & Write Cycle at Same Bank @Burst Length=4
A
ADDR
DQM
10
CKE
RAS
CAS
WE
BA
BA
/AP
CS
CL=2
CL=3
0
1
*Note : 1. Minimum row cycle times is required to complete internal DRAM operation.
0
Row Active
(A-Bank)
Ra
Ra
1
2. Row precharge can interrupt burst on any cycle. [CAS Latency - 1] number of valid output data
3. Access time from Row active command. t
4. Ouput will be Hi-Z after the end of burst. (1, 2, 4, 8 & Full page bit burst)
5. For -55/60/70/80/10, tRDL=1CLK product can be supported within restricted amounts and it will be distinguished by bucket code
is available after Row precharge. Last valid output will be Hi-Z(t
"NV". From the next generation, tRDL will be only 2CLK for every clock frequency
tRCD
2
*Note 3
tRAC
3
(A-Bank)
*Note 3
tRAC
Read
Ca
4
5
Qa0
tSAC
6
tRC
Qa1
Qa0
tOH
tSAC
*Note 1
7
Qa2
Qa1
CC
tOH
*Note 2
8
*(t
Precharge
(A-Bank)
RCD
Qa3
Qa2
9
+ CAS latency - 1) + t
- 28
HIGH
Qa3
tSHZ
10
*Note 4
tSHZ
SHZ
11
Row Active
(A-Bank)
) after the clcok.
Rb
*Note 4
Rb
12
SAC
13
(A-Bank)
Write
Db0
Db0
Cb
14
Db1
Db1
15
Db2
REV. 1.1 Nov. '99
Db2
CMOS SDRAM
16
Db3
Db3
17
18
Precharge
(A-Bank)
: Don't care
19
tRDL
tRDL
*Note 5
*Note 5