k4s640432e Samsung Semiconductor, Inc., k4s640432e Datasheet - Page 5

• Manufacturer Part Number: k4s640432e
• Description: 4bit Banks Synchronous Dram
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
K4S640432E
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S640432E-TC**
4. K4S640432E-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK
NS
PS CKE & CLK
NS
N
N
P
P
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
t
CKE
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
t
= 2CLKs
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70 C)
V
V
IH
V
V
IH
IH
/V
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
SSQ)
=
=
C
L
- 75
100
135
70
Version
Rev.0.1 Sept. 2001
400
- 1H
125
15
25
15
65
80
1
1
6
3
3
1
CMOS SDRAM
- 1L
125
65
80
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4