k4s1g0732d Samsung Semiconductor, Inc., k4s1g0732d Datasheet - Page 9

• Manufacturer Part Number: k4s1g0732d
• Description: St.16m X 8bit X 4 Banks Sdram
• Manufacturer: Samsung Semiconductor, Inc.

SDRAM stacked 1Gb D-die (x4, x8)
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
12.0 DC Characteristics (x8)
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S1G0732D-UC
4. K4S1G0732D-UL
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK ≤ V
NS
PS CKE & CLK ≤ V
NS
P
N
P
N
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
RC
RC
O
O
= 0 mA
= 0 mA
≥ t
≥ t
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
(Recommended operating condition unless otherwise noted, T
= 10ns
= 10ns
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
= ∞
= ∞
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
/V
= ∞
= ∞
SSQ)
C
L
Rev. 1.0 November. 2005
Version
120
130
230
75
40
20
12
12
60
50
12
4
4
6
Unit
SDRAM
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
A
= 0 to 70°C)
Note
1
1
2
3
4