k4s161622e Samsung Semiconductor, Inc., k4s161622e Datasheet - Page 17
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k4s161622e
Manufacturer Part Number
k4s161622e
Description
1m X 16 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4S161622E.pdf
(42 pages)
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K4S161622E
5. Write Interrupted by Precharge & DQM
*Note : 2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only the other bank precharge of dual banks operation.
DQM
CMD
CLK
DQ
WR
D
0
D
1
D
2
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PRE
D
Masked by DQM
3
Note 3
Note 2
CMOS SDRAM
Rev 1.1 Jan '03