k4d263238k Samsung Semiconductor, Inc., k4d263238k Datasheet - Page 10

• Manufacturer Part Number: k4d263238k
• Description: 128mbit Gddr Sdram 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

K4D263238K
ABSOLUTE MAXIMUM RATINGS
POWER & DC OPERATING CONDITIONS(SSTL_2 In/Out)
Recommended operating conditions(Voltage referenced to V
Note :
Note :
Voltage on any pin relative to Vss
Voltage on V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Device Supply voltage
Output Supply voltage
Reference voltage
Termination voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. Under all conditions V
2. V
3. V
4. V
5. V
6. For any pin under test input of 0V ≤ V
Parameter
peak noise on the V
and an additional + 25mV for AC noise.
REF
tt
IH
IL
of the transmitting device must track V
DD
DD
(max.)= V
(min.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
Parameter
is expected to equal 0.50*V
supply relative to Vss
supply relative to Vss
DDQ
+1.5V for a pulse and it which can not be greater than 1/3 of the cycle rate.
REF
DDQ
may not exceed + 2% of the DC value. Thus, from 0.50*V
Symbol
must be less than or equal to V
V
V
V
V
V
V
I
Vtt
V
DDQ
I
REF
OL
OH
DD
OL
IL
IH
IL
DDQ
IN
of the transmitting device and to track variations in the DC level of the same. Peak to
≤ V
V
0.49*V
V
REF
Vtt+0.76
REF
REF
DD
2.375
2.375
-0.30
V
Min
Symbol
-5
-5
of the receiving device.
IN
-
is acceptable. For all other pins that are not under test V
+0.15
-0.04
V
T
V
, V
I
P
DDQ
DDQ
STG
OS
DD
D
SS
OUT
=0V, T
- 10/19 -
DD
A
=0 to 65°C)
V
.
2.50
2.50
Typ
REF
-
-
-
-
-
-
-
V
0.51*V
V
V
DDQ
Vtt-0.76
REF
REF
2.625
2.625
Max
-55 ~ +150
5
5
-0.5 ~ 3.6
-1.0 ~ 3.6
-0.5 ~ 3.6
+0.04
-
+0.30
-0.15
Value
DDQ
DDQ
1.8
50
128M GDDR SDRAM
, V
REF
is allowed + 25mV for DC error
Unit
uA
uA
V
V
V
V
V
V
V
V
Rev. 1.1 July 2007
IN
=0V.
I
I
OL
OH
=+15.2mA
Unit
=-15.2mA
mA
Note
°C
W
V
V
V
1
1
2
3
4
5
6
6