k4t56163qi Samsung Semiconductor, Inc., k4t56163qi Datasheet - Page 9

• Manufacturer Part Number: k4t56163qi
• Description: 256mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

6.0 Absolute Maximum DC Ratings
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
Note : There is no specific device V
1. The value of V
2. Peak to peak AC noise on V
3. V
4. AC parameters are measured with V
7.0 AC & DC Operating Conditions
7.1 Recommended DC Operating Conditions (SSTL - 1.8)
K4T56163QI
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
standard.
x V
V
TT
Symbol
Symbol
IN,
DDQ
V
V
T
V
V
V
to V
V
V
V
of transmitting device must track V
DDQ
STG
DDQ
DDL
DDL
REF
V
DD
DD
TT
OUT
of the transmitting device and V
DD
.
REF
Voltage on V
Voltage on V
Voltage on V
Voltage on any pin relative to V
Storage Temperature
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
may be selected by the user to provide optimum noise margin in the system. Typically the value of V
DD
DDQ
DDL
REF
pin relative to V
pin relative to V
DD
pin relative to V
may not exceed +/-2% V
Parameter
supply voltage requirement for SSTL-1.8 compliance. However under all conditions V
DD
Parameter
REF
, V
REF
DDQ
of receiving device.
is expected to track variations in V
SS
and V
SS
SS
SS
DDL
tied together.
REF
(DC).
9 of 42
0.49*V
V
REF
Min.
1.7
1.7
1.7
-0.04
DDQ
DDQ
.
0.50*V
Rating
V
Typ.
1.8
1.8
1.8
REF
DDQ
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
Rating
0.51*V
V
REF
Max.
1.9
1.9
1.9
+0.04
DDQ
Rev. 1.0 October 2007
REF
DDR2 SDRAM
DDQ
Units
mV
is expected to be about 0.5
V
V
V
V
must be less than or equal
Units
°C
V
V
V
V
Notes
1,2
Notes
4
4
3
1, 2
1
1
1
1