lrs1808a ETC-unknow, lrs1808a Datasheet - Page 21
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lrs1808a
Manufacturer Part Number
lrs1808a
Description
32m X16 Flash + 16m X16 Scram
Manufacturer
ETC-unknow
Datasheet
1.LRS1808A.pdf
(45 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LRS1808A
Manufacturer:
BI
Quantity:
2 028
Notes:
Symbol
1. V
2. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
3. I
4. Block erase, full chip erase, (page buffer) program are inhibited when F-V
5. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
6. Sampled, not 100% tested.
7. F-V
8. Memory cell data is held. (S-CE
9. Memory cell data is not held. (S-CE
10. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane.
11. Includes F-RY/BY.
V
V
V
V
V
I
I
I
V
V
V
I
CC1
CC2
PPLK
PPH1
PPH2
SLP
LKO
SB
OH
OL
IH
IL
unless V
mode, the device’s current draw is the sum of I
between V
completion. Standard address access timings (t
executed and should not be attempted.
Applying 12V ±0.3V to F-V
and supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace
widths and layout considerations given to the V
Applying 12V ±0.3V to F-V
F-V
CCWS
CC
PP
PP
includes both F-V
S-V
S-V
S-V
S-V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
F-V
Operations
F-V
Erase,(PageBuffer) Program
F-V
(PageBuffer) Program
F-V
is not used for power supply pin. With F-V
may be connected to 12V ±0.3V for a total of 80 hours maximum.
and I
CC
CC
CC
CC
CC
PP
PP
PP
CC
PPLK
is specified.
CCES
Lockout during Normal
during Block Erase, Full Chip
during Block Erase,
Standby Current
Sleep Mode Current
Operation Current
Operation Current
Lockout Voltage
(max.) and V
are specified with the device de-selected. If read or (page buffer) program while in block erase suspend
Parameter
CC
and S-V
PP
PP
PPH1
during erase/program can only be done for a maximum of 1000 cycles on each block.
provides fast erasing or fast programming mode. In this mode, F-V
2
= “V
CC
(min.) , between V
2
.
DC Electrical Characteristics (Continue)
= “V
IH
”)
IL
”)
Notes
4,6,7
6,11
AVQV
CCWS
8
9
6
6
6
7
7
PP
CC
L R S 1 8 0 8 A
(T
) provide new data when addresses are changed.
power bus.
or I
PPH1
Min.
V
V
1.65
11.7
-0.3
-0.3
-0.3
V
A
1.5
CC
CC
PPLK
= -30°C to +85°C, F-V
CCES
(max.) and V
, block erase, full chip erase, (page buffer) program cannot be
Typ.
and I
12
3
CCR
Max.
V
+0.3
12.3
0.3
0.3
0.4
3.3
80
15
20
3
CC
or I
PPH2
CCW
PP
(min.) and above V
Unit
mA t
mA t
µA
µA
V
V
V
V
V
V
V
V
CC
, respectively.
V
= 2.7V to 3.3V, S-V
PPLK
S-CE
S-CE
I
I
CYCLE
CYCLE
OL
OH
= 0.5mA
, and not guaranteed in the range
= -0.5mA
1
2
= Min., I
= 1µs, I
S-V
0.2V
CC
PPH2
CC
Conditions
= 3.0V and T
PP
I/O
- 0.2V
I/O
(max.).
is power supply pin
CC
= 0mA
= 0mA
= 2.7V to 3.1V)
A
= +25 C
19