ntmfs4708n ON Semiconductor, ntmfs4708n Datasheet - Page 2

• Manufacturer Part Number: ntmfs4708n
• Description: Power Mosfet
• Manufacturer: ON Semiconductor

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
Temperature Coefficient
Parameter
V
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
(BR)DSS
C
C
J
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
Q
DS(on)
V
g
d(on)
d(off)
DSS
GSS
G(TH)
R
t
OSS
RSS
= 25°C unless otherwise specified)
RR
t
t
FS
ISS
t
t
SD
GS
GD
RR
a
b
G
r
f
/T
/T
J
J
V
V
V
V
V
GS
GS
GS
GS
GS
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NTMFS4708N
V
= 0 V, V
= 4.5 V, V
= 0 V, I
= 0 V, f = 1.0 MHz, V
= 10 V, V
GS
V
V
V
V
V
V
GS
DS
GS
DS
GS
GS
= 0 V, d
Test Condition
= V
= 0 V, V
= 15 V, I
= 10 V, I
= 0 V, I
= 4.5 V, I
S
DS
R
2
I
S
= 6.25 A
G
DS
DD
DS
= 6.25 A
= 24 V
= 3.0 W
IS
, I
= 15 V; I
= 15 V, I
/d
D
D
GS
D
D
t
= 250 mA
D
= 250 mA
= 100 A/ms,
= 11.5 A
= 11.5 A
= 9.5 A
= ±20V
T
T
T
DS
D
D
T
J
J
J
J
= 11.5 A
= 1.0 A,
= 125°C
= 125°C
= 25°C
= 25°C
= 24 V
Min
1.0
30
10.1
1.95
0.78
0.60
15.5
16.5
Typ
970
440
115
5.0
7.3
1.3
2.6
4.8
6.7
4.3
10
23
10
20
16
32
24
±100
Max
1.0
2.5
1.0
50
10
14
15
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
W
V
V
S
V