TC7W00FU(TE12L) Toshiba, TC7W00FU(TE12L) Datasheet
TC7W00FU(TE12L)
Specifications of TC7W00FU(TE12L)
TC7W00FUTTR
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TC7W00FU(TE12L) Summary of contents
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... TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W00F, TC7W00FU, TC7W00FK Dual 2-Input NAND Gate Features • High Speed • Low power dissipation • High noise immunity • Output drive capability • Symmetrical Output Impedance : |I • Balanced propagation delays • Wide operating voltage range ...
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...
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Electrical Characteristics DC Characteristics Characteristics Symbol High-level input voltage V IH Low-level input voltage V IL High-level output voltage V OH Low-level output voltage V OL Input leakage current I IN Quiescent supply current I CC Test Condition V (V) ...
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AC Characteristics (C = 15pF Characteristics Output Transition Time Propagation Delay Time AC Characteristics (C = 50pF, Input Characteristics Symbol Output Transition Time Propagation delay time Input capacitance Power dissipation capacitance Note defined ...
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Package Dimensions Weight: 0.05 g (typ.) TC7W00F/FU/FK 5 2009-08-04 ...
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Package Dimensions Weight: 0.02 g (typ.) TC7W00F/FU/FK 6 2009-08-04 ...
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Package Dimensions Weight: 0.01 g (typ.) TC7W00F/FU/FK 7 2009-08-04 ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...