se2523bu SiGe Semiconductor, se2523bu Datasheet - Page 4

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se2523bu

Manufacturer Part Number
se2523bu
Description
2.4 Ghz Power Amplifier With Power Detector
Manufacturer
SiGe Semiconductor
Datasheet
AC Electrical Characteristics
802.11b/g AC Electrical Characteristics
Conditions: V
192-DST-01 Rev 1.2 Apr-12-2006
Symbol
VSWR
ACPR
STAB
EVM
ΔS
P
t
f
S
r
2f
3f
L-U
1dB
, t
21
21
f
Error Vector Magnitude
Frequency Range
Output 1dB compression point
Small Signal Gain
Gain Variation over band
Adjacent Channel Power Ratio
Harmonic
Rise and Fall Time
Stability
Tolerance to output load
mismatching
evaluation board, unless otherwise noted
CC
±11 MHz offsets from carrier
±22 MHz offsets from carrier
= V
EN
Parameter
= 3.3 V, f = 2.45 GHz, T
No modulation
P
P
f
P
Mbps CCK signal, BT =
0.45
P
802.11b, 1 Mbps, CCK
signal
P
Mbps OFDM signal, 64
QAM
P
VSWR = 4:1 All Phases
P
VSWR = 6:1 All Phases
A
IN
IN
IN
OUT
OUT
OUT
OUT
OUT
= 25 °C, as measured on SiGe Semiconductor’s SE2523BU-EV1
= 2400 to 2500 MHz
= -25 dBm
= -25 dBm,
= 23 dBm, 11
= 23 dBm,
= 18.5 dBm, 54
= 23 dBm, CW,
= 23 dBm, CW,
Conditions
2.4 GHz Power Amplifier with Power Detector
-
-
All non-harmonically related outputs less
2400
Min.
23.5
29
-
-
-
-
-
-
-
than -50 dBc/100 kHz
Typ.
26.5
-35
-52
-60
-57
2.5
0.5
32
1
-
No damage
2500
Max.
35
-
-
-
-
-
-
-
-
SE2523BU
Preliminary
dBm/MHz
dBm/MHz
µSec
MHz
dBm
Unit
dBc
dB
dB
4 of 12
%

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