a3l90ddxx AEGIS SEMICONDUTORES LTDA, a3l90ddxx Datasheet - Page 2

• Manufacturer Part Number: a3l90ddxx
• Description: Thyristors
• Manufacturer: AEGIS SEMICONDUTORES LTDA

Fig. 1 - Current Ratings Characteristics
150
140
130
120
110
100
90
80
*Sinusoidal Waveform
0
V
V
V
r
r
I
R
junction-to-case
R
case-to-sink
wt Weight
Case Style
CHARACTERISTICS
RM
F1
F2
FM
F(TO)1
F(TO)2
thJC
thCS
Low-level resistance
High-level resistance
SEMICONDUTORES LTDA.
10
Peak reverse current
Peak forward voltage
Maximum Allowable Case Temperature
Thermal resistance,
Thermal resistance,
Low-level threshold
High-level threshold
PARAMETER
20
Average Forward Current (A)
30
30º
40
50
60º
MIN.
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60
90º
TO-240AA
110(4)
TYP.
---
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70
A3L:90DD.XX
120º
80
0.052
0.069
MAX. UNITS
1.45
0.79
0.87
1.78
1.57
0.35
0.1
10
---
180º
90
g(oz.)
O
O
O
O
C/W
C/W
C/W
C/W
mW
mA
Fig. 2 - Current Ratings Characteristics
V
V
I
T
Av. power = V
Use low values for I
T
180 sine wave, double side
120 rectangular wave
Mtg. Surface smooth, flat and greased.
FM
Per junction, DC operation.
J
J
= 150 C
150
140
130
120
110
100
= 150 C. Max. rated V
= p x I
O
O
90
80
70
60
*Rectangular Waveform
0
O
O
F(AV)
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
, T
F(TO)
J
TEST CONDITIONS
Maximum Allowable Case Temperature
= 25 C, t
* I
FM
F(AV)
Average Forward Current (A)
O
30º
< pI
RRM
+r
---
p
F(AV)
---
= 400ms square wave.
F
60º
* [I
F(RMS)
90º
]
120º
2
180º
DC