ptma180152m Infineon Technologies Corporation, ptma180152m Datasheet - Page 2

• Manufacturer Part Number: ptma180152m
• Description: Wideband Rf Ldmos Integrated Power Amplifier 15 W, 1800 ? 2000 Mhz
• Manufacturer: Infineon Technologies Corporation

RF Characteristics
GSM/EDGE Measurements
V
Characteristic
Intermodulation Distortion
Spurs Load 3:1
Gain Flatness
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power
Total Device Dissipation
Storage Temperature Range
Thermal Resistance (T
Ordering Information
Type and Version
PTMA180152M V1
Preliminary Data Sheet
DS
Above 25°C derate by
= 28 V, I
DQ1
= 70 mA, I
CASE
Package Outline
PG-DSO-20-63
Stage 1
Stage 2
(cont.)
DQ2
= 70°C, 15 W CW)
(cont.)
= 150 mA, ƒ = 1805 – 1880 MHz, P
Conditions
V
V
V
V
V
V
V
GS
DS
DS
GS
GS
DS
GS
= 28 V, V
= 63 V, V
= 28
= 0 V, I
= 10 V, V
= 10 V, V
= 10 V, V
Package Description
Thermally-enhanced surface-mount
V, I
DS
DQ
GS
GS
DS
DS
DS
= 10 mA
= CCC mA
= 0 V
= 0 V
= 0.1 V
= 0.1 V
= 0 V
Stage 1
Stage 2
2 of 5
OUT
V
Symbol
Symbol
Symbol
R
R
= 7 W average
(BR)DSS
IMD3
V
T
I
R
R
I
I
DS(on)
DS(on)
V
V
GSS
DSS
DSS
P
P
—
DSS
T
STG
GS
GS
G
IN
D
J
JC
JC
Preliminary PTMA180152M
Min
Min
65
—
—
—
—
—
—
—
—
2
Shipping
Tape
–40 to +150
–0.5 to +12
Value
0.52
TBD
TBD
Typ
Typ
–37
–60
200
0.2
0.6
3.5
2.5
65
15
91
—
—
—
—
Rev. 01, 2009-03-03
Max
Max
10.0
1.0
1.0
—
—
—
—
—
—
3
Marking
PTMA180152M
W/°C
°C/W
°C/W
Unit
Unit
Unit
dBc
dBc
dB
µA
µA
µA
°C
°C
W
W
V
V
V
V